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with SiO2 blocking layer PbSe nanowire-based field-effect transistor

Based on

1 Articles
2011 Most recent source

Composition

1

on silicon 250 nm thick SiO2 layer

Type
Formula
Role
2

2 nm thick titanium layer

titanium layer titanium film Ti layer titanium
Type
Formula
Role
3

18 nm thick gold layer

Au film
Type
Formula
Role
4

single-crystalline lead selenide nanowires

single-crystalline PbSe nanowires
Type
Formula
Role
5

50 nm thick silicon dioxide layer

50 nm thick SiO2 layer 50 nm thick SiO2 film silica layer silica film SiO2 layer
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
drain current dependent on hydrazine concentration

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
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  2. VjEZTRzbNID85GuMocnoGHIHTdcdW7E3rWjMMoZh7RVTdE7LRptpDTME26Wfb1ofLUe2NTWSy9
Product

with SiO2 blocking layer PbSe nanowire-based field-effect transistor

References

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