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PbSe nanowire-based bottom-contact inverter

Based on

1 Articles
2011 Most recent source

Composition

1

unipolar p-type PbSe nanowire-based field-effect transistor

unipolar p-type predominantly p-type PbSe NW-based FET
Type
Formula
Role
2

unipolar n-type PbSe nanowire-based field-effect transistor

unipolar n-type predominantly p-type PbSe NW-based FET
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
output voltage dependent on positive/negative V<sub>DD</sub>

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

References

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