Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

PbSe nanowire-based bottom-contact inverter

Based on

1 Articles
2011 Most recent source

Composition

1

unipolar p-type PbSe nanowire-based field-effect transistor

unipolar p-type predominantly p-type PbSe NW-based FET
Type
Formula
Role
2

unipolar n-type PbSe nanowire-based field-effect transistor

unipolar n-type predominantly p-type PbSe NW-based FET
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
output voltage dependent on positive/negative V<sub>DD</sub>

1 more entry available to subscribes only.

Or, view sample content

Applications

Area Application Source
electronics

0 more entry available to subscribes only.

Or, view sample content

Characterization

Biological effects

Preparation

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial