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metal-ferroelectric-semiconductor composition

Based on

2 Articles
2009 Most recent source

Composition

1

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type
Formula GaN
Role
2

lead zirconate titanate thin film

PZT film
Type
Formula
Role
3

platinum

Type
Formula Pt
Role
4

aluminium

aluminum
Type
Formula Al
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance dependent on hysteresis

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • tetraisopropyl orthotitanate
  • gallium(III) arsenide
  • lead(II) acetate
See all (4)
Product

metal-ferroelectric-semiconductor composition

Size: not specified

Medium/Support: none

References

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