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ambipolar/n-type separated nanotube thin-film transistor

Based on

1 Articles
2011 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

50 nm thick silicon dioxide layer

50 nm thick SiO2 layer 50 nm thick SiO2 film silica layer silica film SiO2 layer
Type
Formula
Role
3

3-aminopropyltriethoxysilane

APTES
Type
Formula C9H23NO3Si
Role
4

pre-separated semiconducting carbon nanotubes

Type
Formula
Role
5

titanium

Type
Formula Ti
Role
6

palladium

Type
Formula Pd
Role
7

aluminium oxide

aluminum oxide alumina
Type
Formula Al2O3
Role

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • silicon
  • 3-aminopropyltriethoxysilane
See all (4)
  1. q9JlC9PlylbFMAqaFl7cKlO8wPsX1AvCneY6uyVT1pfPpTxpudYN4Q6pinXHqB7sPB
Product

ambipolar/n-type separated nanotube thin-film transistor

References

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