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n-type unipolar graphene field-effect transistor

Based on

1 Articles
2011 Most recent source

Composition

1

on silicon 285 nm thick SiO2 layer

Type
Formula
Role
2

titanium oxide-decorated monolayer graphene

titanium oxide-decorated graphene flake
Type
Formula
Role
3

titanium

Type
Formula Ti
Role
4

gold

Type
Formula Au
Role
5

200 nm thick silicon nitride layer

200 nm thick Si3N4 layer silicon nitride layer Si3N4 layer
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
conductance dependent on passivation layer removal

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
  1. jnGUW08kG783jzA0XrS
Product

n-type unipolar graphene field-effect transistor

References

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