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phosphorescent organic light-emitting diode

Based on

1 Articles
2011 Most recent source

Composition

1

10-nm thick molybdenum trioxide layer

molybdenum(VI) oxide film molybdenum trioxide film molybdenum oxide film MoO3 layer MoO3 film
Type
Formula
Role
2

80 nm-thick NPB layer

NPB film
Type
Formula
Role
3

4,4',4''-tri(N-carbazolyl)triphenylamine layer

TCTA layer TCTA film
Type
Formula
Role
4

film of p-BISiTPA doped with FIrpic and (fbi)2Ir(acac)

Type
Formula
Role
5

1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene film

1,3,5-tris(N--phenylbenzimidazol-2-yl)benzene layer TPBI layer TPBI film TPBi film
Type
Formula
Role
6

1 nm thick lithium fluoride layer

lithium fluoride layer lithium fluoride film 1 nm-thick LiF layer LiF layer LiF film
Type
Formula
Role
7

100 nm-thick aluminium layer

100 nm-thick aluminium layer 100-nm thick aluminium layer 100 nm thick alumnium layer Al gate electrode aluminium layer aluminium film aluminium slab aluminum film cathode layer Al thin film Al electrode Al films Al layer Al film Al slab
Type
Formula
Role
8

indium tin oxide

ITO
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
CIE chromaticity coordinate

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Applications

Characterization

Method Source
electroluminescence

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • indium tin oxide
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Product

phosphorescent organic light-emitting diode

References

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