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bottom-gate bottom-contact field-effect transistor based on HDTT film

Based on

1 Articles
2011 Most recent source

Composition

1

doped silicon

Type
Formula
Role
2

silicon oxide layer

SiO(x) layer
Type
Formula
Role
3

indium tin oxide layer

ITO layer
Type
Formula
Role
4

30 nm thick gold layer

gold thin film Au thin film Au gold film Au nanofilm gold layer gold film Au layer Au film
Type
Formula
Role
5

2,3,6,7,10,11-hexadecylthiotriphenylene film

HDTT film
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

bottom-gate bottom-contact field-effect transistor based on HDTT film

References

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