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bottom-gate bottom-contact field-effect transistor based on HDTT fiber film

Based on

13 Articles
2017 Most recent source

Composition

1

p-Si

Type
Formula
Role
2

10-nm-thick SiO2 layer

silica thin film silica nanofilm SiO2 thin film SiO2 nanofilm silica layer SiO2 layer SiO2 film
Type
Formula
Role
3

Si nanoparticles embedded in silicon nitride layer

silicon-rich silicon nitride layer
Type
Formula
Role
4

silicon nitride

Type
Formula Si3N4
Role
5

aluminium

aluminum
Type
Formula Al
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band gap

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
electroluminescence

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

bottom-gate bottom-contact field-effect transistor based on HDTT fiber film

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

bottom-gate bottom-contact field-effect transistor based on HDTT fiber film

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
Product

bottom-gate bottom-contact field-effect transistor based on HDTT fiber film

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
Product

bottom-gate bottom-contact field-effect transistor based on HDTT fiber film

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  1. zf0O29qpigdks2lj
Product

bottom-gate bottom-contact field-effect transistor based on HDTT fiber film

Size: not specified

Medium/Support: none

References

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