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4,7-bis-[2-[2,5-bis(2-ethylhexyl)-6-(5-hexyl-2,2':5',2''-terthiophene-5''-yl)pyrrolo[3,4-c]pyrrolo-1,4-dione-3-yl]-thiophene-5-yl]-2,1,3-benzothiadiazole-based ambipolar field-effect transistor

Based on

1 Articles
2012 Most recent source

Composition

1

Si/SiO2/4,7-bis-[2-[2,5-bis(2-ethylhexyl)-6-(5-hexyl-2,2':5',2''-terthiophene-5''-yl)pyrrolo[3,4-c]pyrrolo-1,4-dione-3-yl]-thiophene-5-yl]-2,1,3-benzothiadiazole/barium/aluminium

Si/SiO2/BTDPP2/Ba/Al
Type
Formula
Role
2

silicon

Type
Formula Si
Role
3

4,7-bis-[2-[2,5-bis(2-ethylhexyl)-6-(5-hexyl-2,2':5',2''-terthiophene-5''-yl)pyrrolo[3,4-c]pyrrolo-1,4-dione-3-yl]-thiophene-5-yl]-2,1,3-benzothiadiazole film

BTDPP2 film
Type
Formula
Role
4

aluminium

aluminum
Type
Formula Al
Role
5

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
6

barium

Type
Formula Ba
Role

Properties

General physical and chemical properties

Property Value Source
capacitance

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. YdEZ1C0l9prIH
Product

4,7-bis-[2-[2,5-bis(2-ethylhexyl)-6-(5-hexyl-2,2':5',2''-terthiophene-5''-yl)pyrrolo[3,4-c]pyrrolo-1,4-dione-3-yl]-thiophene-5-yl]-2,1,3-benzothiadiazole-based ambipolar field-effect transistor

References

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