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In0.2Ga0.8As/GaAs rolled-up field-effect transistor

Based on

1 Articles
2013 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type
Formula GaAs
Role
2

Al0.33Ga0.67As layer

Type
Formula
Role
3

GaAs layer

Type
Formula
Role
4

In0.2Ga0.8As layer

Type
Formula
Role
5

Si-doped GaAs layer

Type
Formula
Role
6

NiGeAu alloy layer

Type
Formula
Role
7

Al2O3 layer

Type
Formula
Role
8

titanium layer

Ti layer
Type
Formula
Role
9

chromium layer

Cr layer
Type
Formula
Role
10

titanium

Type
Formula Ti
Role
11

gold plasmonic film

gold thin film Au thin film Au catalyst gold layer gold film Au layer Au films Au film
Type
Formula
Role
12

germanium-gold alloy

Type
Formula
Role
13

nickel

Type
Formula Ni
Role

Properties

General physical and chemical properties

Property Value Source
conduction band diagram dependent on as-grown/free-standing variants

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Applications

Area Application Source
sensors (excluding biosensors)

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • low temperature gallium arsenide
  • aluminium
See all (4)
  1. M4mxc
Product

In0.2Ga0.8As/GaAs rolled-up field-effect transistor

References

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