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zinc tin oxide thin film transistor

Based on

1 Articles
2012 Most recent source

Composition

1

p++-doped silicon

Type
Formula
Role
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

zinc tin oxide thin film

ZTO thin film
Type
Formula
Role
4

100 nm thick aluminium layer

100 nm-thick aluminium layer 100-nm thick aluminium layer 100 nm thick alumnium layer Al gate electrode aluminium layer aluminium film aluminium slab aluminum film cathode layer Al electrode Al thin film Al layer Al films Al film Al slab
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
drain-source current dependent on active layer annealing temperature

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • p++-doped silicon
  • tin(IV) tert-butoxide
  1. 5EqmlxXI4yOvxo6Qgq8Fgb3T4
  2. Ey9XzC0Y
  3. rGNd
Product

zinc tin oxide thin film transistor

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • p++-doped silicon
  • tin(IV) tert-butoxide
  1. nDfq2n6tX9PDafvq7OIp8cZYo
  2. LmkkBPzI
  3. kC1r
Product

zinc tin oxide thin film transistor

References

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