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(Bi0.57Sb0.43)2Te3-based field effect transistor

Based on

3 Articles
2013 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type
Formula AsGa
Role
2

(Bi0.57Sb0.43)2Te3 thin film

Type
Formula
Role
3

10 nm thick chromium layer

chromium nanolayer chromium layer chromium film Cr layer Cr film
Type
Formula
Role
4

gold source/drain electrode

100 nm thick gold layer 100 nm-thick gold layer gold sacrificial film planar gold film gold electrode gold substrate Au thin film gold coating gold target gold layer gold wafer gold film flat gold Au layer Au film
Type
Formula
Role
5

blocking oxide layer

blocking oxide layer Al2O3 layer Al2O3 film BO layer
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on dopant presence during nanowire preparation

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

(Bi0.57Sb0.43)2Te3-based field effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • bismuth
  • antimony
  • low temperature gallium arsenide
See all (4)
  1. IFF8xivIZIo8EPp8q4
Product

(Bi0.57Sb0.43)2Te3-based field effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • low temperature gallium arsenide
  1. ZYQ6uCXcFEulFAT
Product

(Bi0.57Sb0.43)2Te3-based field effect transistor

Size: not specified

Medium/Support: none

References

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