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(Bi0.57Sb0.43)2Te3-based field effect transistor

Based on

3 Articles
2013 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type
Formula AsGa
Role
2

InAs quantum dots

Type
Formula
Role
3

GaAs film

Type
Formula
Role
4

InAs quantum dots

Type
Formula
Role
5

GaAs film

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on dopant presence during nanowire preparation

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

(Bi0.57Sb0.43)2Te3-based field effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • bismuth
  • antimony
  • low temperature gallium arsenide
See all (4)
  1. zEi75skxw3G48rgsoH
Product

(Bi0.57Sb0.43)2Te3-based field effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • low temperature gallium arsenide
  1. T7rKTkjBTsoGgXL
Product

(Bi0.57Sb0.43)2Te3-based field effect transistor

Size: not specified

Medium/Support: none

References

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