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(Bi0.57Sb0.43)2Te3-based field effect transistor

Based on

1 Articles
2013 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type
Formula GaAs
Role
2

(Bi0.57Sb0.43)2Te3 thin film

Type
Formula
Role
3

10 nm thick chromium layer

chromium nanolayer chromium layer chromium film Cr layer Cr film
Type
Formula
Role
4

gold source/drain electrode

100 nm thick gold layer 100 nm-thick gold layer gold sacrificial film planar gold film gold electrode gold substrate Au thin film gold coating gold target gold layer gold wafer gold film flat gold Au layer Au film
Type
Formula
Role
5

aluminium oxide film

blocking oxide layer Al2O3 layer Al2O3 film BO layer
Type
Formula
Role

Properties

Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • bismuth
  • antimony
  • low temperature gallium arsenide
See all (4)
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Product

(Bi0.57Sb0.43)2Te3-based field effect transistor

References

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