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with SiO2 blocking layer PbSe nanowire-based field-effect transistor

Based on

4 Articles
2013 Most recent source

Composition

1

SiO2/Si substrate

SiO2/Si substrate
Type
Formula
Role
2

single-walled carbon nanotubes

2 nm thick titanium layer titanium layer titanium film titanium Ti layer SWNT
Type
Formula
Role
3

palladium

palladium Au film
Type
Formula Pd
Role
4

p+-doped silicon

single-crystalline PbSe nanowires p+-doped silicon
Type
Formula
Role
5

ZrO2 layer

50 nm thick SiO2 layer 50 nm thick SiO2 film silica layer silica film ZrO2 layer SiO2 layer
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier density

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Product

with SiO2 blocking layer PbSe nanowire-based field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
  1. aHMIaHUMkrALemX
  2. SfJmwTt7vUVJUulfRReez4
Product

with SiO2 blocking layer PbSe nanowire-based field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
  1. WMu5xJRKECnVsdj
  2. vPQqMeUX4PS3rFkLaUtta0
Product

with SiO2 blocking layer PbSe nanowire-based field-effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
  1. yWje8HjnIyFJwP2
  2. 7m0g3rPixrSNptEOVDqWJ0
Product

with SiO2 blocking layer PbSe nanowire-based field-effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
  1. l1ygppLQ8W1j9wH
  2. X2XNrvADT6gLYISo4tdYD6
Product

with SiO2 blocking layer PbSe nanowire-based field-effect transistor

Size: not specified

Medium/Support: none

References

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