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site-controlled In(Ga)As QD device

Based on

1 Articles
2013 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type
Formula AsGa
Role
2

gallium arsenide layer

GaAs layer
Type
Formula
Role
3

aluminium arsenide layer

AlAs layer
Type
Formula
Role
4

patterned GaAs layer

Type
Formula
Role
5

Al0.75Ga0.25As layer

Type
Formula
Role
6

gallium arsenide layer

GaAs layer
Type
Formula
Role
7

In(Ga)As quantum dots

In(Ga)As QD
Type
Formula
Role
8

gallium arsenide layer

GaAs layer
Type
Formula
Role
9

Al0.83Ga0.17As layer

Type
Formula
Role
10

gallium arsenide layer

GaAs layer
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier lifetime

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

References

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