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Ga-doped In2O3 nanowire field-effect transistor

Based on

1 Articles
2013 Most recent source

Composition

1

SiO2/Si substrate

Type
Formula
Role
2

Ga-doped In2O3 nanowires

Ga-doped In2O3 NW
Type
Formula
Role
3

20 nm thick chromium layer

chromium layer chromium film chromium Cr layer Cr film
Type
Formula
Role
4

40 nm thick gold layer

gold electrode gold layer gold film Au layer Au film
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
charge carrier mobility

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

Ga-doped In2O3 nanowire field-effect transistor

References

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