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niobium pentoxide-based resistive switching nonvolatile memory device

Based on

1 Articles
2013 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

100 nm thick SiO2 substrate

100 nm-thick silica layer silicon oxide nanolayer 100 nm thick SiO2 layer 100-nm-thick SiO2 layer silicon dioxide film SiO2 insulator layer silicon oxide layer silica nanofilm SiO2 nanofilm silica layer silica film SiO2 layer SiO2 layer SiO2 film
Type
Formula
Role
3

20 nm thick titanium layer

titanium electrode titanium layer titanium film Ti layer titanium Ti film
Type
Formula
Role
4

100 nm thick platinum layer

FTO-glass supported Pt film platinum layer platinum film Pt layer Pt film
Type
Formula
Role
5

niobium pentoxide film

Nb2O5 film
Type
Formula
Role
6

silver

Type
Formula Ag
Role

Properties

General physical and chemical properties

Property Value Source
electric current

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Applications

Area Application Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

niobium pentoxide-based resistive switching nonvolatile memory device

References

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